NSN 5962-01-461-4535
Part Details | DIGITAL MICROCIRCUIT
5962-01-461-4535 A microcircuit specifically designed to generate, modify, or process electrical signals which operate with two distinct or binary states. These states are commonly referred to as on and off, true and false, high and low, or "1" and "0".
Alternate Parts: G6457511A, G645751-1A, G6457511A, G645751-1A, G6457511A, G645751-1A, 5962-01-461-4535, 01-461-4535, 5962014614535, 014614535
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 14, 1998 | 01-461-4535 | 31779 ( MICROCIRCUIT, DIGITAL ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-461-4535
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| G645751-1A | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| G645751-1A | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| G645751-1A | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5962-01-461-4535
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC AND COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| DESIGN FUNCTION AND QUANTITY | 8 MEMORY, ELECTRICALLY ERASABLE PROGRAMMABLE ROM |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ABCM0.5 VOLTS MINIMUM AND ABC6.0 VOLTS MAXIMUM |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 32 CASE |
| TERMINAL SURFACE TREATMENT | SOLDER |
| INCLOSURE CONFIGURATION | LEADED CHIP CARRIER |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,MEMORY,DIGITAL,CMOS 128K X 8 BIT EEPROM,MONOLITHIC SILICON |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | BURN IN AND ERASABLE AND PROGRAMMABLE AND MONOLITHIC |
| SPECIAL FEATURES | REFER TO SMD 5962-38267 |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| END ITEM IDENTIFICATION | SQQ-32(V)3 UN E/I FSCM 49956 |