NSN 5962-01-464-3420
Part Details | MEMORY MICROCIRCUIT
5962-01-464-3420 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: PALC22V10D25DMB, PALC22V10D-25DMB, PALCE22V1025DMB, PALCE22V10-25DMB, 59628984104LX, 5962-8984104LX, 59628984104LB, 5962-8984104LB, 59628984104LA, 5962-8984104LA, 596289841, 5962-89841, ROMPROM HEAD 238, ROM/PROM HEAD 238, GAL22V10D25LD833C, GAL22V10D-25LD/833C, GAL22V10C25LD883C, GAL22V10C-25LD/883C, 22V1025BLA, 22V10-25/BLA, 5962-01-464-3420, 01-464-3420, 5962014643420, 014643420
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 26, 1999 | 01-464-3420 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-464-3420
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| PALC22V10D-25DMB | 65786 | CYPRESS SEMICONDUCTOR CORPORATIONDBA CYPRESS |
| PALCE22V10-25DMB | 65786 | CYPRESS SEMICONDUCTOR CORPORATIONDBA CYPRESS |
| 5962-8984104LX | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8984104LB | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8984104LA | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-89841 | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| ROM/PROM HEAD 238 | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| GAL22V10D-25LD/833C | 66675 | LATTICE SEMICONDUCTOR CORP |
| GAL22V10C-25LD/883C | 66675 | LATTICE SEMICONDUCTOR CORP |
| 22V10-25/BLA | 0C7V7 | TELEDYNE E2V US, INC.DBA TELEDYNE E2V (US) |
Technical Data | NSN 5962-01-464-3420
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | ABCM0.5 VOLTS MINIMUM AND ABC7.0 VOLTS MAXIMUM |
| TIME RATING PER CHACTERISTIC | NSAADR25.00 NANOSECONDS |
| MEMORY DEVICE TYPE | PAL |
| OPERATING TEMP RANGE | -55.0 TO +125.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS EE PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON |
| MAXIMUM POWER DISSIPATION RATING | 1.5 WATTS |
| STORAGE TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| FEATURES PROVIDED | MONOLITHIC AND ELECTROSTATIC SENSITIVE |
| SPECIAL FEATURES | RECOMMENDED OPERATING SUPPLY VOLTAGE (VCC) 4.5 TO 5.5 VDC; CASE OUTLINE DESCRIPTIVE DESIGNATOR MIL-STD-1835, GDIP3-T24 OR CDIP4-T24 |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| END ITEM IDENTIFICATION | F-15E ACFT; F-18 ACFT |
| SUPPLEMENTARY FEATURES | 22-INPUT, 10-OUTPUT, EE CMOS, ARCHITECTURALLY GENERIC, PROGRAMMABLE AND-OR ARRAY |