NSN 5962-01-491-2679

Part Details | MEMORY MICROCIRCUIT

5962-01-491-2679 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.

Alternate Parts: 1DT203L20TDB, 2009657001, 2009657-001, 1DT203L20TDB, IDT7203L20TDB, IDT203L20TDB, 5962-01-491-2679, 01-491-2679, 5962014912679, 014912679

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59OCT 17, 200101-491-267941015 ( MICROCIRCUIT, MEMORY )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-491-2679
Part Number Cage Code Manufacturer
1DT203L20TDB61722EPSON AMERICA INC
2009657-00166948HARRIS CORPORATIONDBA GOVERNMENT COMMUNICATIONS
1DT203L20TDB61772INTEGRATED DEVICE TECHNOLOGY INC
IDT7203L20TDB61772INTEGRATED DEVICE TECHNOLOGY INC
IDT203L20TDB61772INTEGRATED DEVICE TECHNOLOGY INC
Technical Data | NSN 5962-01-491-2679
Characteristic Specifications
OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
VOLTAGE RATING AND TYPE PER CHARACTERISTICACVM0.5 VOLTS MINIMUM AND ACV7.0 VOLTS MAXIMUM
TIME RATING PER CHACTERISTICNSAADR20.00 NANOSECONDS
MEMORY DEVICE TYPE FIRST-IN FIRST-OUT
OPERATING TEMP RANGE-55.0 TO +125.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT
INCLOSURE CONFIGURATION DUAL-IN-LINE
INCLOSURE MATERIAL CERAMIC
PART NAME ASSIGNED BY CONTROLLING AGENCYCMOS ASYNCHRONOUS FIFO
STORAGE TEMP RANGE-65.0 TO +155.0 DEG CELSIUS
FEATURES PROVIDED HIGH SPEED AND LOW POWER AND ASYNCHRONOUS
SPECIAL FEATURES2,048 X 9-BIT; THIN CERAMIC DIP
TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
END ITEM IDENTIFICATIONRADAR THREAT EMITTER AN/MST-T1; M3P REU-L