NSN 5962-01-515-6598
Part Details | DIGITAL MICROCIRCUIT
5962-01-515-6598 A microcircuit specifically designed to generate, modify, or process electrical signals which operate with two distinct or binary states. These states are commonly referred to as on and off, true and false, high and low, or "1" and "0".
Alternate Parts: SI4435DY, SI4435DY, 5962-01-515-6598, 01-515-6598, 5962015156598, 015156598
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 03, 2003 | 01-515-6598 | 31779 ( MICROCIRCUIT, DIGITAL ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-515-6598
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| SI4435DY | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| SI4435DY | 1NTS2 | TEMIC SEMICONDUCTORS N A CORP |
Technical Data | NSN 5962-01-515-6598
| Characteristic | Specifications |
|---|---|
| OUTPUT LOGIC FORM | P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | AAQM30.0 VOLTS MAXIMUM |
| TIME RATING PER CHACTERISTIC | NSCAEA30.00 NANOSECONDS AND NSCADZ120.00 NANOSECONDS |
| OPERATING TEMP RANGE | -55.0 TO +150.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 8 GULLWING |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | P-CHANNEL, 30 VOLT (D-S), METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFET) |
| BODY LENGTH | 4.8 MILLIMETERS MINIMUM AND 5.0 MILLIMETERS MAXIMUM |
| BODY WIDTH | 3.8 MILLIMETERS MINIMUM AND 4.0 MILLIMETERS MAXIMUM |
| MAXIMUM POWER DISSIPATION RATING | 2.5 WATTS |
| SPECIAL FEATURES | NOT RECOMMENDED FOR NEW DESIGN, USE PART NUMBER SI4435BDY, CAGE 17856 |
| OVERALL WIDTH | 5.8 MILLIMETERS MINIMUM AND 6.2 MILLIMETERS MAXIMUM |
| OVERALL HEIGHT | 1.35 MILLIMETERS MINIMUM AND 1.75 MILLIMETERS MAXIMUM |