NSN 5962-01-578-1827
Part Details | MEMORY MICROCIRCUIT
5962-01-578-1827 A circuit designed to store information and/or coded instructions. Item has pins or other connections to install in a computer or computing device. Does not include magnetic drums, tapes, punched cards or the like. For items that have portable type connections see MEMORY, PORTABLE, SOLID STATE.
Alternate Parts: 71256L35DB, 71256L35DB, 5962-01-578-1827, 01-578-1827, 5962015781827, 015781827
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 29, 2009 | 01-578-1827 | 41015 ( MICROCIRCUIT, MEMORY ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-578-1827
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 71256L35DB | Z2L94 | AVNET ELECTRONICSMARKETINGAUSTRALIAPTY LTD |
| 71256L35DB | 4MHN3 | INTEGRATED DEVICE TECHNOLOGY INC.DBA I D T |
Technical Data | NSN 5962-01-578-1827
| Characteristic | Specifications |
|---|---|
| CURRENT RATING PER CHARACTERISTIC | GX50.00 MILLIAMPERES NOMINAL |
| MEMORY DEVICE TYPE | RAM |
| MEMORY CAPACITY | 32K X 8 |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS STATIC RAM 256K (32K X 8-BIT) |
| SPECIAL FEATURES | HIGH-SPEED ADDRESS-CHIP SELECT TIME; LOW-POWER OPERATION; BATTERY BACKUP OPERATION-2V DATA RETENTION; PRODUCED WITH ADVANCED HIGH-PERFORMANCE CMOS TECHNOLOGY; INPUT AND OUTPUT DIRECTLY TTL-COMPATIBLE; AVAILABLE IN STANDARD 28-PIN (300 OR 600 MIL) CERAMIC DIP, 28-PIN (600 MIL) PLASTIC DIP, 28-PIN (300 MIL) SOJ AND 32-PIN LCC; MILITARY PRODUCT COMPLIANT TO MIL-STD-883, CLASS B |