NSN 5962-01-603-2094
Part Details | DIGITAL MICROCIRCUIT
5962-01-603-2094 A microcircuit specifically designed to generate, modify, or process electrical signals which operate with two distinct or binary states. These states are commonly referred to as on and off, true and false, high and low, or "1" and "0".
Alternate Parts: MT5C2564C20883C, MT5C2564C-20/883C, 596288681, 5962-88681, 59628868106LA, 5962-8868106LA, P4C125820CMB, P4C1258-20CMB, CY7C19420DMB, CY7C194-20DMB, 5962-01-603-2094, 01-603-2094, 5962016032094, 016032094
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 23, 2012 | 01-603-2094 | 31779 ( MICROCIRCUIT, DIGITAL ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5962-01-603-2094
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MT5C2564C-20/883C | 0EU86 | AUSTIN SEMICONDUCTOR INCDBA MICROSS COMPONENTS |
| 5962-88681 | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 5962-8868106LA | 67268 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| P4C1258-20CMB | 3DTT2 | PYRAMID SEMICONDUCTOR CORP |
| CY7C194-20DMB | 0C7V7 | TELEDYNE E2V US, INC.DBA TELEDYNE E2V (US) |
Technical Data | NSN 5962-01-603-2094
| Characteristic | Specifications |
|---|---|
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON |
| SPECIAL FEATURES | MONOLITHIC SILICON, NOT JUST A CIRCUIT CARD |
| TEST DATA DOCUMENT | 96906-MIL-PRF-38535 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |