NSN 5961-00-013-0167
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-013-0167 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 196011P12, UZ845, UZ745, 4056306, 405630-6, DSZ2070, 5961-00-013-0167, 00-013-0167, 5961000130167, 000130167
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 25, 1967 | 00-013-0167 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-013-0167
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 196011P12 | 94117 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC. |
| UZ845 | 12969 | MICRO USPD INC |
| UZ745 | 12969 | MICRO USPD INC |
| 405630-6 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| DSZ2070 | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
Technical Data | NSN 5961-00-013-0167
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 45.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
| VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
| CURRENT RATING PER CHARACTERISTIC | AS15.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | AF3.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.700 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.250 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.085 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |