NSN 5961-00-062-0208
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-062-0208 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N823AA, 013625, 013-625, 1N823A, 1N823A, 05010000, RELEASE 3109, 1N823A, 1N823A, 1N823A, 131034001, 131034-001, 03C00823A, 1N823A, 1N823A, 1N823A, 1N823A, F0000112, F00001-12, 5301602, 530160-2, Q531784312, 1N823A, 1N823A, 900541, 9005-4-1, 66003004, 1N823A, 99194385, 1N823A, 1N823A, 4801010823, 4801-01-0823, 1N823A, 5961-00-062-0208, 00-062-0208, 5961000620208, 000620208
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | JAN 01, 1961 | 00-062-0208 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-062-0208
Part Number | Cage Code | Manufacturer |
---|---|---|
1N823AA | C7191 | ADELCO ELEKTRONIK GMBH |
013-625 | 92739 | AMPEX SYSTEMS CORP |
1N823A | 92739 | AMPEX SYSTEMS CORP |
1N823A | 16352 | C O D I CORPDBA CODI SEMICONDUCTOR INC |
05010000 | 16152 | DIGITEC CORP |
RELEASE 3109 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
1N823A | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
1N823A | 04713 | FREESCALE SEMICONDUCTOR, INC. |
1N823A | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
131034-001 | 91417 | HARRIS CORPORATIONDBA GOVERNMENT COMMUNICATIONS |
03C00823A | 50319 | HEKIMIAN LABORATORIES INCCUSTOMER SUPPORT DEPT |
1N823A | 16068 | INTERNATIONAL DIODE CORP |
1N823A | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
1N823A | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
1N823A | 14830 | RAYTHEON COMICROWAVE AND POWER TUBE DIV |
F00001-12 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
530160-2 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
Q531784312 | S3092 | RHEINMETALL AIR DEFENCE AG |
1N823A | 07256 | SILICON TRANSISTOR CORPSUB OF BBF INC |
1N823A | 21873 | SLATER ELECTRIC INC |
9005-4-1 | 93929 | SPX CORPORATIONDBA RADIODETECTION |
66003004 | 89022 | TDK-LAMBDA AMERICAS INC.DIV HIGH POWER DIVISION |
1N823A | 15818 | TELCOM SEMICONDUCTOR INC |
99194385 | F6481 | THALES SA |
1N823A | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
1N823A | 75042 | TRW INCTRW ELECTRONIC COMPONENTS |
4801-01-0823 | 23338 | WAVETEK U S INCDIV OF WAVETEK CORP |
1N823A | 12711 | WESTERN SEMICONDUCTORS DIV |
Technical Data | NSN 5961-00-062-0208
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE |
VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
CURRENT RATING PER CHARACTERISTIC | AS7.50 MILLIAMPERES NOMINAL |
POWER RATING PER CHARACTERISTIC | AG250.0 MILLIWATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
INCLOSURE MATERIAL | GLASS |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 1.000 INCHES MINIMUM |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |